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DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D088
BSH102 N-channel enhancement mode MOS transistor
Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Dec 08
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
FEATURES * Very low threshold * High-speed switching * No secondary breakdown * Direct interface to C-MOS, TTL etc. APPLICATIONS * Power management * DC to DC converters * Battery powered applications * `Glue-logic'; interface between logic blocks and/or periphery * General purpose switch.
1 2
MAM273
BSH102
PINNING - SOT23 PIN 1 2 3 SYMBOL g s d gate source drain DESCRIPTION
handbook, halfpage
3
d
g
s
DESCRIPTION N-channel enhancement mode MOS transistor in a SOT23 SMD package.
Top view
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL VDS VSD VGS VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation VDS = VGS ; ID = 1 mA Ts = 80 C VGS = 10 V; ID = 0.5 A Ts = 80 C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. VGD = 0; IS = 0.5 A CONDITIONS - - - 1 - - - MIN. 1 20 - 0.85 0.4 0.5 MAX. 30 V V V V A W UNIT
1997 Dec 08
2
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGS ID IDM Ptot PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation Ts = 80 C; note 1 note 2 Ts = 80 C Tamb = 25 C; note 3 Tamb = 25 C; note 4 Tstg Tj IS ISM Notes 1. Ts is the temperature at the soldering point of the drain lead. 2. Pulse width and duty cycle limited by maximum junction temperature. 3. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W. 4. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. storage temperature operating junction temperature Ts = 80 C note 2 CONDITIONS - - - - - - - -55 -55 - - MIN.
BSH102
MAX. 30 20 0.85 3.4 0.5 0.75 0.54 +150 +150 V V A A
UNIT
W W W C C
Source-drain diode source current (DC) peak pulsed source current 0.5 2 A A
MGM190
MGM210
handbook, halfpage
0.6
handbook, halfpage
10
Ptot (W)
IDS (A) 1
(1)
0.4 10-1 P 0.2 10-2 tp 0 0 40 80 120 TS (C) 160 10-3 10-1 T 1 10 VDS (V) 102 t
= T
tp
DC
= 0.01; Ts = 80 C. (1) RDSon limitation.
Fig.2 Power derating curve.
Fig.3 SOAR.
1997 Dec 08
3
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 140
BSH102
UNIT K/W
103 handbook, full pagewidth Rth j-s (K/W)
(1) (2) (3) (4) (5) (6)
MGM201
102
10
(7)
P
=
tp T
(8) (9)
tp T
t
1 10-6
(10)
10-5
10-4
10-3
10-2
10-1
tp (s)
1
(1) = 1. (6) = 0.1.
(2) = 0.75. (7) = 0.05.
(3) = 0.5. (8) = 0.02.
(4) = 0.33. (9) = 0.01.
(5) = 0.2. (10) = 0.
Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
1997 Dec 08
4
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IGSS RDSon Ciss Coss Crss QG QGS QGD PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current gate leakage current drain-source on-state resistance input capacitance output capacitance reverse transfer capacitance total gate charge gate-source charge gate-drain charge CONDITIONS VGS = 0; ID = 10 A VGS = VDS ; ID = 1 mA VGS = 0; VDS = 24 V VGS = 20 V; VDS = 0 VGS = 10 V; ID = 0.5 A VGS = 4.5 V; ID = 0.25 A VGS = 0; VDS = 24 V; f = 1 MHz VGS = 0; VDS = 24 V; f = 1 MHz VGS = 0; VDS = 24 V; f = 1 MHz VGS = 10 V; VDD = 15 V; ID = 0.5 A; Tamb = 25 C VDD = 15 V; ID = 0.5 A; Tamb = 25 C VDD = 15 V; ID = 0.5 A; Tamb = 25 C VGS = 0 to 10 V; VDD = 15 V; ID = 0.5 A; Rgen = 6 VGS = 0 to 10 V; VDD = 15 V; ID = 0.5 A; Rgen = 6 VGS = 0 to 10 V; VDD = 15 V; ID = 0.5 A; Rgen = 6 VGS = 10 to 0 V; VDD = 15 V; ID = 0.5 A; Rgen = 6 VGS = 10 to 0 V; VDD = 15 V; ID = 0.5 A; Rgen = 6 VGS = 10 to 0 V; VDD = 15 V; ID = 0.5 A; Rgen = 6 VGD = 0; IS = 0.5 A IS = 0.5 A; di/dt = -100 A/s MIN. 30 1 - - - - - - - - - - TYP. - - - - - - 67 27 13 2290 150 780
BSH102
MAX. - - 100 100 0.4 0.6 - - - - - -
UNIT V V nA nA pF pF pF pC pC pC
Switching times td(on) tf ton td(off) tr toff turn-on delay time fall time turn-on switching time turn-off delay time rise time turn-off switching time - - - - - - 3.5 4 7.5 8 3 11 - - - - - - ns ns ns ns ns ns
Source-drain diode VSD trr source-drain diode forward voltage reverse recovery time - - - 25 1 - V ns
1997 Dec 08
5
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
BSH102
handbook, full pagewidth
VDD Vin RL Vout 0
90 %
10 %
90 % Vin Vout 10 % 0 td(on) tf
MAM274
td(off) tr toff
ton
Fig.5 Switching times test circuit with input and output waveforms.
handbook, halfpage V
12 GS (V) 10
MGM205
16 VDS 14 12 (V)
(1) handbook, halfpage
4
MGM203
(2)
(3)
ID (A)
(4)
3
8 10 2 6
(1) (2) (5)
8
(6)
6 4 4 2 2 0 1110 1324 1538 1752 1966 2180 184 414 652 892 0 0 0 0 2 4 6 8 10 VDS (V) 1
(7) (8)
QG (pC) VDD = 15 V; ID = 0.5 A; Tamb = 25 C. (1) VDS. (2) VGS. Tamb = 25 C; tp = 300 s; = 0. (1) (2) (3) (4) VGS = 10 V. VGS = 6 V. VGS = 5 V. VGS = 4.5 V. (5) (6) (7) (8) VGS = 4 V. VGS = 3.5 V. VGS = 3 V. VGS = 2.5 V.
Fig.6
Gate-source and drain-source voltages as functions of total gate charge; typical values.
Fig.7
Output characteristics; typical values.
1997 Dec 08
6
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
BSH102
handbook, halfpage
4
MGM204
handbook, halfpage
160
MGM202
ID (A) 3
C (pF) 120
2
80 Ciss
1
40 Coss Crss
0 0 2 4 VGS (V) 6
0 0 10 20 VDS (V) 30
VGS = 0 ; f = 1 MHz; Tamb = 25 C. VDS = 10 V; Tamb = 25 C; tp = 300 s; = 0.
Fig.9 Fig.8 Transfer characteristic; typical values.
Capacitance as a function of drain-source voltage; typical values.
handbook, halfpage
2
MGH206
IS (A)
handbook, halfpage
10
MGM207
RDSon ()
(1) (2) (3) (4)
1.6
1.2 1 0.8
(5) (6)
(7)
(1)
(2)
(3)
0.4
0
10-1 0 0.4 0.8 VSD (V) 1.2
0
2
4
6
8
10 VGS (V)
VGD = 0. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -65 C.
Tamb = 25 C; tp = 300 s; = 0. (1) ID = 0.1 A. (2) ID = 0.25 A. (3) ID = 0.5 A.
(4) (5) (6) (7)
ID = 0.75 A. ID = 1 A. ID = 2 A. ID = 4 A.
Fig.10 Source current as a function of source-drain diode forward voltage; typical values.
Fig.11 Drain-source on-state resistance as a function of gate-source voltage; typical values.
1997 Dec 08
7
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
BSH102
MGM208
handbook, halfpage
1.2
handbook, halfpage
1.8
MGM209
k k 1.6
1
1.4
1.2
0.8
1
(1) (2)
0.8
0.6 -65
-15
35
85
135
185 Tj (C)
0.6 -65
-15
35
85
135
185 Tj (C)
V GSth at T j k = ------------------------------------V GSth at 25C VGSth at VDS = VGS; ID = 1 mA.
R DSon at T j k = ---------------------------------------R DSon at 25 C (1) RDSon at VGS = 10 V; ID = 0.5 mA. (2) RDSon at VGS = 4.5 V; ID = 0.25 mA.
Fig.12 Temperature coefficient of gate-source threshold voltage as a function of junction temperature; typical values.
Fig.13 Temperature coefficient of drain-source on-resistance as a function of junction temperature; typical values.
1997 Dec 08
8
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BSH102
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1997 Dec 08
9
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BSH102
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Dec 08
10
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
NOTES
BSH102
1997 Dec 08
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137107/00/02/pp12
Date of release: 1997 Dec 08
Document order number:
9397 750 02962

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